transient thermal impedance

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I'm making a note to check if Vce/Vcb settles quickly and cleanly. thermal data is often provided in the form of specific values of thermal resistance or impedance. So how much does transient heating of the output transistors upset their Vbe, which upsets bias setting and how much distortion does this generate ? --> Yes. (Your current configuration has those two compensating so you're still close to 60W total on Q1.) Unfortunately the case temperature is not homogenuous, especially due to interface compound, which has to be considered when evaluating the thermal impedance. Also, if you want to be that choosy, set the positive to +28V to get closer to 30V on Q1ce. Thermal resistivity is the reciprocal of thermal conductivity. Therefore, the heat sink thermal resistance is 1.28 K/W, as per equation (11). I'm familiar with the term "thermal resistance" and "transient thermal response" or "thermal rise" from our thermal analysis folks, but the the OP's title really doesn't explain things.. \$\endgroup\$ – SteveSh Jan 8 at 23:30 In addition, other charts may be presented showing how steady−state thermal characteristics typically depend on certain external conditions, such as the amount of heat spreading metal that has been provided on the application board for the specific If you set the negative supply to -32.1 it would be closer. It is actually a huge cemented wirewound resistor which is about 8 inches long, so it has a bit of thermal mass too.$$\frac{T}{P}=\frac{R_{th}}{1+\frac{s}{\omega_c}}$$$$G(s)=\frac{V_{BE}}{P}=\frac{kR_{th}}{q(1+\frac{s}{\omega_c})}\ln{(\frac{I_E}{I_{ES}}+1)}$$$$I_E=I_S((e^{\frac{V_{BE}}{V_T}}-e^{\frac{V_{BC}}{V_T}})+\frac{1}{\beta_F}(e^{\frac{V_{BE}}{V_T}}-1))$$$$V_{BE}=V_T\ln{(\frac{\frac{I_E}{I_S}+e^{\frac{V_{BC}}{V_T}}+\frac{1}{\beta_F}}{\frac{1}{\beta_F}+1})}$$Thanks for the detailed answer! The transient thermal impedance is an artifical construct we make to preserve our desire to employ simple thermal circuits , 4 even to transient heat flow problems. A heat sink with the width 130, length 90 and a height of 30 mm, optimized for natural convection, has an expected theoretical thermal resistance of 0.92K/W and the spreading resistance 0.3 K/W. The FET used to switch the collector current is an NMOS, and it has its source connected to the supply, I assume that this is an error, and that you meant for it to be a PMOS?Also, I did not address the point of how you drive the FET, because you did not show any gate-drive circuit, and I have just assumed that you have measured the collector voltage, and that it does indeed switch fully on and off.Thanks for contributing an answer to Electrical Engineering Stack Exchange! E�g��(�4�O&�� I've seen setups like that:However this one has two constant current sources, which begs the question: what is the settling time and transient behavior of these current sources and how will that interfere?The setup is powered by a bench supply. I only take the Vbe waveform after the MOSFET has switched, since before the FET switches, Vce and Vbe will be different. The colliding particles, which include molecules, atoms and electrons, transfer disorganized microscopic kinetic and potential energy, jointly known as …

The phrase "transient thermal impedance" really doesn't make much sense.

These represent the maximum slopes of those curves, starting at t0.50ms is a complete cycle at 20Hz, typically the lowest frequency of interest in audio design...so there will be very little distortion from an audio standpoint. (low impedance point) of my circuit. So Q1's dissipation can be switched between low and high power, and the scope can measure Vbe and also hFe (via voltage on R3).Current draw from the power supply is constant, so I don't need to worry about its transient behavior (and I can check if the supply voltage stays flat). My comments: "We assumed that the thermal resistance R_th was the same between your test setup and the final application" -- I will try measuring with no heat sink, a very low thermal inertia heat sink (vapor chamber) and a high thermal inertia one (big chunk of aluminium) to separate thermal response of the transistor vs thermal response of the heat sink.

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